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CMT06N60N220

power field effect transistor

器件类别:分立半导体    晶体管   

厂商名称:虹冠电子(Champion)

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器件参数
参数名称
属性值
厂商名称
虹冠电子(Champion)
包装说明
FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code
unknown
雪崩能效等级(Eas)
180 mJ
配置
SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压
600 V
最大漏极电流 (Abs) (ID)
6 A
最大漏极电流 (ID)
6 A
最大漏源导通电阻
1.2 Ω
FET 技术
METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss)
60 pF
JEDEC-95代码
TO-220AB
JESD-30 代码
R-PSFM-T3
元件数量
1
端子数量
3
工作模式
ENHANCEMENT MODE
最高工作温度
150 °C
最低工作温度
-55 °C
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
FLANGE MOUNT
极性/信道类型
N-CHANNEL
最大功率耗散 (Abs)
125 W
最大脉冲漏极电流 (IDM)
18 A
表面贴装
NO
端子形式
THROUGH-HOLE
端子位置
SINGLE
晶体管应用
SWITCHING
晶体管元件材料
SILICON
最大关闭时间(toff)
135 ns
最大开启时间(吨)
90 ns
文档预览
CMT06N60
P
OWER
F
IELD
E
FFECT
T
RANSISTOR
GENERAL DESCRIPTION
This high voltage MOSFET uses an advanced termination
scheme to provide enhanced voltage-blocking capability
without degrading performance over time. In addition, this
advanced MOSFET is designed to withstand high energy in
avalanche and commutation modes. The new energy
efficient design also offers a drain-to-source diode with a
fast recovery time. Designed for high voltage, high speed
switching applications in power supplies, converters and
PWM motor controls, these devices are particularly well
suited for bridge circuits where diode speed and
commutating safe operating areas are critical and offer
additional and safety margin against unexpected voltage
transients.
!
!
FEATURES
!
!
!
Robust High Voltage Termination
Avalanche Energy Specified
Source-to-Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
I
DSS
Specified at Elevated Temperature
PIN CONFIGURATION
TO-220/TO-220FP
SYMBOL
D
Front View
G ATE
SO URCE
DRAIN
G
1
2
3
S
N-Channel MOSFET
2003/06/19
Preliminary
Rev. 1.1
Champion Microelectronic Corporation
Page 1
CMT06N60
P
OWER
F
IELD
E
FFECT
T
RANSISTOR
ABSOLUTE MAXIMUM RATINGS
Rating
Drain to Current
Continuous
Pulsed
Gate-to-Source Voltage
Continue
Non-repetitive
Total Power Dissipation
TO-220
TO-220FP
Operating and Storage Temperature Range
Single Pulse Drain-to-Source Avalanche Energy
T
J
= 25℃
(V
DD
= 100V, V
GS
= 10V, I
L
= 6A, L = 10mH, R
G
= 25Ω)
Thermal Resistance
Junction to Case
Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds
(1) VDD = 50V, ID = 6A
(2) Pulse Width and frequency is limited by T
J(max)
and thermal response
E
AS
θ
JC
θ
JA
T
L
180
1.0
62.5
260
℃/W
T
J
, T
STG
Symbol
I
D
I
DM
V
GS
V
GSM
P
D
125
45
-55 to 150
mJ
Value
6.0
18
±20
±40
V
V
W
Unit
A
ORDERING INFORMATION
Part Number
CMT06N60N220
CMT06N60N220FP
Package
TO-220
TO-220FP
TEST CIRCUIT
Test Circuit – Avalanche Capability
2003/06/19
Preliminary
Rev. 1.1
Champion Microelectronic Corporation
Page 2
CMT06N60
P
OWER
F
IELD
E
FFECT
T
RANSISTOR
ELECTRICAL CHARACTERISTICS
Unless otherwise specified, T
J
= 25℃.
CMT06N60
Characteristic
Drain-Source Breakdown Voltage
(V
GS
= 0 V, I
D
= 250
μA)
Drain-Source Leakage Current
(V
DS
= 600 V, V
GS
= 0 V)
(V
DS
= 480 V, V
GS
= 0 V, T
J
= 125℃)
Gate-Source Leakage Current-Forward
(V
gsf
= 20 V, V
DS
= 0 V)
Gate-Source Leakage Current-Reverse
(V
gsr
= 20 V, V
DS
= 0 V)
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 250
μA)
Static Drain-Source On-Resistance (V
GS
= 10 V, I
D
= 3.5A) *
Forward Transconductance (V
DS
= 15 V, I
D
= 3.0A) *
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
(V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz)
(V
DD
= 300 V, I
D
= 6.0 A,
V
GS
= 10 V,
R
G
= 9.1Ω) *
(V
DS
= 300 V, I
D
= 6.0 A,
V
GS
= 10 V)*
Symbol
V
(BR)DSS
I
DSS
100
50
I
GSSF
I
GSSR
V
GS(th)
R
DS(on)
g
FS
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
L
D
L
S
3.4
1498
158
29
14
19
40
26
35.5
8.1
14.1
4.5
7.5
2100
220
60
30
40
80
55
50
2.0
100
100
4.0
1.2
nA
nA
V
mhos
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
nH
nH
Min
600
Typ
Max
Units
V
μA
Internal Drain Inductance
(Measured from the drain lead 0.25” from package to center of die)
Internal Drain Inductance
(Measured from the source lead 0.25” from package to source bond pad)
SOURCE-DRAIN DIODE CHARACTERISTICS
Forward On-Voltage(1)
Forward Turn-On Time
Reverse Recovery Time
(I
S
= 6.0 A,
d
IS
/d
t
= 100A/µs)
V
SD
t
on
t
rr
0.83
**
266
1.2
V
ns
ns
* Pulse Test: Pulse Width
≦300µs,
Duty Cycle
≦2%
** Negligible, Dominated by circuit inductance
2003/06/19
Preliminary
Rev. 1.1
Champion Microelectronic Corporation
Page 3
CMT06N60
P
OWER
F
IELD
E
FFECT
T
RANSISTOR
TYPICAL ELECTRICAL CHARACTERISTICS
2003/06/19
Preliminary
Rev. 1.1
Champion Microelectronic Corporation
Page 4
CMT06N60
P
OWER
F
IELD
E
FFECT
T
RANSISTOR
PACKAGE DIMENSION
TO-220
D
A
c1
φ
F
E
PIN 1: GATE
PIN 2: DRAIN
PIN 3: SOURCE
E1
A
A1
L1
b
b1
c
c1
D
L
E
E1
e
e1
F
L
b1
e1
e
b
A1
c
Side View
L1
φ
Front View
TO-220FP
0
I
J
R1
.5
0
R1
.5
0
B
C
R3
.1
±
0
.18
D
Q
H
A
B
A
C
D
E
E
P
K
O
G
H
I
J
K
M
N
O
P
Q
0
.6
R1
G
b
R
b
b1
b2
e
b1
e
Front View
b2
R
N
M
Side View
Back View
2003/06/19
Preliminary
Rev. 1.1
Champion Microelectronic Corporation
Page 5
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